分辨率:二次电子像分辨率:3.0 nm保证(高真空方式);背散射电子像分辨率:4.0 nm保证(低真空方式) Resolution: secondary electron image resolution: 3.0 nm (high vacuum mode); back scattering electron image resolution: 4.0 nm (low vacuum mode) 加速电压:0.3~30 KV(0.3~9.99 KV 10 V/步);(10~30 KV 0.1 KV/步) Accelerating voltage: 0.3~30 KV(0.3~9.99 KV 10 V/step);(10~30 KV 0.1 KV/step) 放大倍率:×5~×300,000 Magnification ratio: ×5~×300,000 最大样品尺寸:直径153 mm,高度60 mm (WD=15 mm) Maximum sample size: diameter 153 mm, height 60 mm (WD=15 mm) 镜筒偏压:自动偏压转换+固定偏压连续可变 (四偏压功能) Drawtube voltage bias: automatic bias conversion + continuously viable fixed bias (Quad Bias-function) |